Display apparatus

ABSTRACT

A display apparatus includes: a substrate having a bending area between a first area and a second area; internal conductive lines on the substrate in the first area; external conductive lines on the substrate in the second area; an organic material layer covering the bending area and covering at least a portion of the internal conductive lines and the external conductive lines; and connection lines on the organic material layer and connecting the internal conductive lines to the external conductive lines, respectively. Organic through-holes are defined through the organic material layer, the connection lines are respectively connected to the internal conductive lines through the organic through-holes, and an upper surface of the organic material layer between the organic through-holes has a convex curved shape.

This application is a divisional of U.S. patent application Ser. No.15/903,480, filed on Feb. 23, 2018, which claims priority to KoreanPatent Application No. 10-2017-0041932, filed on Mar. 31, 2017, and allthe benefits accruing therefrom under 35 U.S.C. § 119, the content ofwhich in its entirety is herein incorporated by reference.

BACKGROUND 1. Field

One or more embodiments relate to a display apparatus, and moreparticularly, to a display apparatus in which occurrence of defects suchas broken wiring therein is reduced.

2. Description of the Related Art

A display apparatus is an apparatus for visually displaying an imagecorresponding to image data applied thereto. The display apparatusincludes a substrate divided into a display area and a non-display area.In the display area, gate lines and data lines are insulated from eachother, and a plurality of pixel areas are defined by intersections ofthe gate lines and the data lines. Also, in the display area, thin filmtransistors (“TFT”s) and pixel electrodes electrically connected to theTFTs are provided to correspond to the pixel areas. In the non-displayarea, various conductive lines for transmitting electrical signals tothe display area are arranged.

At least a portion of the display apparatus may be bent to enhancevisibility from various angles or decrease the size of the non-displayarea. Various techniques are being developed for reducing defects andsaving costs during the manufacturing process of a display apparatus ina bent shape.

SUMMARY

One or more embodiments include a display apparatus in which an intervalbetween conductive lines in the display apparatus may be reduced and anoccurrence of defects such as short-circuits of the conductive lines maybe reduced.

According to one or more embodiments, a display apparatus includes: asubstrate on which a first area, a second area, and a bending areabetween the first area and the second area are defined, wherein thesubstrate is bent around a bending axis extending in a first direction;a plurality of internal conductive lines on the substrate in the firstarea; a plurality of external conductive lines on the substrate in thesecond area; an organic material layer covering the bending area andcovering at least a portion of the plurality of internal conductivelines and the plurality of external conductive lines; and a plurality ofconnection lines on the organic material layer and connecting theplurality of internal conductive lines to the plurality of externalconductive lines, respectively. In such embodiments; a plurality oforganic through-holes is defined through the organic material layer, theplurality of connection lines are respectively connected to theplurality of internal conductive lines through the plurality of organicthrough-holes, the plurality of organic through-holes include aplurality of first organic through-holes arranged in the firstdirection, and an upper surface of the organic material layer arrangedbetween the plurality of first organic through-holes has a convex curvedshape.

In an embodiment, a portion of each of the plurality of connection linesmay be on the organic material layer between the plurality of firstorganic through-holes, and the plurality of connection lines may extendacross the bending area.

In an embodiment, a portion of each of the plurality of connectionlines, which is on the organic material layer between the plurality offirst organic through-holes, may be curved in the first direction tocorrespond to the shape of the upper surface of the organic materiallayer.

In an embodiment, an elongation percentage of the plurality ofconnection lines may be greater than an elongation percentage of theplurality of internal conductive lines and an elongation percentage ofthe plurality of external conductive lines.

In an embodiment, the plurality of internal conductive lines mayinclude: a plurality of first internal conductive lines; and a pluralityof second internal conductive lines in a different layer from theplurality of first internal conductive lines, where an insulating layermay be between the plurality of first internal conductive lines and theplurality of second internal conductive lines.

In an embodiment, the plurality of first internal conductive lines andthe plurality of second internal conductive lines may be alternatelyarranged with each other.

In an embodiment, the plurality of external conductive lines mayinclude: a plurality of first external conductive lines; and a pluralityof second external conductive lines in a different layer from theplurality of first external conductive lines, and an insulating layermay be between the plurality of first external conductive lines and theplurality of second external conductive lines.

In an embodiment, the display apparatus may further include a thin filmtransistor in the first area or the second area, where the thin filmtransistor includes a semiconductor layer and a gate electrode which areinsulated from each other by a first gate insulating layer. In such anembodiment, at least some of the plurality of internal conductive linesand the plurality of external conductive lines may include a samematerial as the gate electrode and be in a same layer as the gateelectrode.

In an embodiment, the display apparatus may further include: a thin filmtransistor in the first area or the second area, wherein the thin filmtransistor includes a semiconductor layer and a gate electrode which areinsulated from each other by a first gate insulating layer; a secondgate insulating layer covering the thin film transistor; and a storagecapacitor including a first storage capacitor plate in a same layer asthe first gate insulating layer, and a second storage capacitor plate onthe second gate insulating layer. In such an embodiment, at least someof the plurality of internal conductive lines and the plurality ofexternal conductive lines may include a same material as the secondstorage capacitor plate and be in a same layer as the second storagecapacitor plate.

In an embodiment, the display apparatus may further include: a thin filmtransistor in the first area or the second area, where the thin filmtransistor includes a semiconductor layer and a gate electrode which areinsulated from each other by a first gate insulating layer; a secondgate insulating layer covering the thin film transistor; and a storagecapacitor including a first storage capacitor plate in a same layer asthe gate electrode, and a second storage capacitor plate on the secondgate insulating layer. In such an embodiment, some of the plurality ofinternal conductive lines may include a same material as the gateelectrode and be in a same layer as the gate electrode, and theremaining internal conductive lines may include a same material as thesecond storage capacitor plate and be in a same layer as the secondstorage capacitor plate.

In an embodiment, the display apparatus may further include: a thin filmtransistor in the first area or the second area, where the thin filmtransistor includes a semiconductor layer and a gate electrode; aninterlayer insulating layer covering the thin film transistor; and adata line on the interlayer insulating layer. In such an embodiment, atleast one of the plurality of connection lines may include a samematerial as the data line and be in a same layer as the data line.

In an embodiment, the display apparatus may further include: a thin filmtransistor in the first area or the second area, where the thin filmtransistor includes a semiconductor layer and a gate electrode; aninterlayer insulating layer covering the thin film transistor; a dataline on the interlayer insulating layer; a first planarization layer onthe interlayer insulating layer and covering the data line; and aconductive layer on the first planarization layer. In such anembodiment, at least one of the plurality of connection lines mayinclude a same material as the conductive layer and be in a same layeras the conductive layer.

In an embodiment, the plurality of organic through-holes may furtherinclude a plurality of second organic through-holes spaced apart fromthe plurality of first organic through-holes, where connection linesconnecting the plurality of second organic through-holes are locatedbetween the plurality of first organic through-holes.

In an embodiment, the display apparatus may further include an inorganicinsulating layer, where an opening or a groove corresponding to thebending area is defined through the inorganic insulating layer. In suchan embodiment, the organic material layer may fill the opening or thegroove and extend to an upper surface of the inorganic insulating layer.

In an embodiment, the plurality of organic through-holes may expose theinorganic insulating layer, and the plurality of connection lines may berespectively connected to the plurality of internal conductive lines viacontact holes defined in the inorganic insulating layer.

In an embodiment, an end of each of the plurality of internal conductivelines may overlap an inside of each of the plurality of organicthrough-holes, and an end of each of the plurality of internalconductive lines may not overlap a lower edge of each of the pluralityof organic through-holes.

In an embodiment, at least some of the plurality of internal conductivelines and at least some of the plurality of external conductive linesmay be in different layers from each other.

According to one or more embodiments, a display apparatus includes: asubstrate comprising a display area and a peripheral area having abending area, where the substrate is bent around a bending axisextending in a first direction; an inorganic insulating layer on thesubstrate, where an opening or a groove is defined in the inorganicinsulating layer to correspond to the bending area; a plurality ofinternal conductive lines spaced apart from each other around thebending area; a plurality of external conductive lines spaced apart fromeach other around the bending area; an organic material layer fillingthe opening or the groove and covering at least portions of theplurality of internal conductive lines and the plurality of externalconductive lines; and a plurality of connection lines on the organicmaterial layer and connecting the plurality of internal conductive linesto the plurality of external conductive lines, respectively. In suchembodiments, a plurality of organic through-holes is defined through theorganic material layer, and the plurality of connection lines arerespectively connected to the plurality of internal conductive linesthrough the plurality of organic through-holes. In such embodiments, theplurality of organic through-holes includes a plurality of first organicthrough-holes arranged in the first direction, and an upper surface ofthe organic material layer between the plurality of first organicthrough-holes has a convex curved shape.

In an embodiment, the plurality of internal conductive lines and theplurality of external conductive lines may be spaced apart from eachother with the opening or the groove of the inorganic insulating layertherebetween.

In an embodiment, the display apparatus may further include: a thin filmtransistor in the display area, where the thin film transistor includesa semiconductor layer and a gate electrode which are insulated from eachother by a first gate insulating layer; a second gate insulating layercovering the thin film transistor; and a storage capacitor including afirst storage capacitor plate in a same layer as the first gateinsulating layer and a second storage capacitor plate on the second gateinsulating layer. In such an embodiment, the plurality of internalconductive lines include a plurality of first internal conductive linesincluding a same material as the gate electrode and in a same layer asthe gate electrode, and a plurality of second internal conductive linesincluding a same material as the second storage capacitor plate and in asame layer as the second storage capacitor plate.

In an embodiment, the plurality of first internal conductive lines andthe plurality of second internal conductive lines may be alternatelyarranged with each other.

In an embodiment, the display apparatus may further include: a thin filmtransistor in the display area, where the thin film transistor includesa semiconductor layer and a gate electrode; an interlayer insulatinglayer covering the thin film transistor; and a data line on theinterlayer insulating layer. In such an embodiment, at least one of theplurality of internal conductive lines and the plurality of externalconductive lines may include a same material as the gate electrode andbe in the same layer as the gate electrode, and at least one of theplurality of connection lines may include a same material as the dataline and be in a same layer as the data line.

In an embodiment, an end of each of the plurality of internal conductivelines may overlap an inside of each of the plurality of organicthrough-holes, and an end of each of the plurality of internalconductive lines may not overlap a lower edge of each of the pluralityof organic through-holes.

In an embodiment, the display apparatus may further include: a bendingprotective layer on the plurality of connection lines.

According to one or more embodiments, a display apparatus includes: asubstrate on which a first area, a second area, and a bending areabetween the first area and the second area are defined, where thesubstrate is bent around a bending axis extending in a first direction;a display area arranged in the first area; an encapsulation layercovering the display area and including an organic encapsulation layer;a plurality of internal conductive lines arranged in the first area anda plurality of external conductive lines arranged in the second area; anorganic material layer covering the bending area and covering at least aportion of the plurality of internal conductive lines and the pluralityof external conductive lines; and a plurality of connection lines on theorganic material layer and connecting the plurality of internalconductive lines to the plurality of external conductive lines,respectively. In such embodiment, a plurality of organic through-holesis defined through the organic material layer, and the plurality ofconnection lines are respectively connected to the plurality of internalconductive lines between the first area and the bending area through theplurality of organic through-hole. In such embodiments, the organicencapsulation layer and the organic material layer are spaced apart fromeach other.

In an embodiment, the plurality of organic through-holes may include aplurality of first organic through-holes arranged in the firstdirection, and an upper surface of the organic material layer betweenthe plurality of first organic through-holes may have a convex curvedshape.

In an embodiment, a portion of each of the plurality of connection linesmay be on the upper surface of the organic material layer having theconvex curved shape, and the plurality of connection lines may extendacross the bending area.

In an embodiment, the encapsulation layer may further include a firstinorganic encapsulation layer and a second inorganic encapsulationlayer, the organic encapsulation layer may be disposed between the firstinorganic encapsulation layer and the second inorganic encapsulationlayer, and the encapsulation layer and the organic material layer may bespaced apart from each other.

In an embodiment, an end of each of the plurality of internal conductivelines may overlaps an inside of each of the plurality of organicthrough-holes, and an end of each of the plurality of internalconductive lines may not overlap a lower edge of each of the pluralityof organic through-holes.

According to one or more embodiments as described herein, an intervalbetween conductive lines in the display apparatus may be reduced and anoccurrence of defects of the conductive lines may be reduced.

BRIEF DESCRIPTION OF THE DRAWINGS

These and/or other features will become apparent and more readilyappreciated from the following description of the embodiments, taken inconjunction with the accompanying drawings, in which:

FIG. 1 is a perspective view of a portion of a display apparatusaccording to an embodiment;

FIG. 2 is a plan view of a portion of the display apparatus of FIG. 1;

FIG. 3 shows cross-sectional views of portions of the display apparatus,taken along lines A-A′ and B-B′ of FIG. 2;

FIG. 4 shows cross-sectional views of portions of a display apparatusaccording to an alternative embodiment;

FIG. 5 shows cross-sectional views of portions of a display apparatusaccording to another alternative embodiment;

FIG. 6 is an enlarged plan view of a portion I of FIG. 2;

FIG. 7 is a cross-sectional perspective view taken along line II-II′ ofFIG. 6;

FIG. 8 is a cross-sectional view taken along line III-III′ of FIG. 6;

FIG. 9 is a cross-sectional view illustrating a portion of a comparativeembodiment of a display apparatus;

FIG. 10 is a plan view of a portion of a display apparatus according toan alternative embodiment;

FIG. 11 is a cross-sectional view taken along line IV-IV′ of FIG. 10;

FIG. 12 shows cross-sectional views of portions of a display apparatusaccording to another embodiment;

FIG. 13 is a cross-sectional view of a portion of a display apparatusaccording to another embodiment;

FIG. 14 is a cross-sectional view of a portion of a display apparatusaccording to another embodiment;

FIGS. 15A and 15B are cross-sectional views of portions of displayapparatuses according to other embodiments;

FIG. 16 is a cross-sectional view of portions of a display apparatusaccording to another alternative embodiment.

DETAILED DESCRIPTION

The invention now will be described more fully hereinafter withreference to the accompanying drawings, in which various embodiments areshown. This invention may, however, be embodied in many different forms,and should not be construed as limited to the embodiments set forthherein. Rather, these embodiments are provided so that this disclosurewill be thorough and complete, and will fully convey the scope of theinvention to those skilled in the art. Like reference numerals refer tolike elements throughout.

It will be understood that when an element is referred to as being “on”another element, it can be directly on the other element or interveningelements may be therebetween. In contrast, when an element is referredto as being “directly on” another element, there are no interveningelements present.

It will be understood that, although the terms “first,” “second,”“third” etc. may be used herein to describe various elements,components, regions, layers and/or sections, these elements, components,regions, layers and/or sections should not be limited by these terms.These terms are only used to distinguish one element, component, region,layer or section from another element, component, region, layer orsection. Thus, “a first element,” “component,” “region,” “layer” or“section” discussed below could be termed a second element, component,region, layer or section without departing from the teachings herein.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting. As used herein, thesingular forms “a,” “an,” and “the” are intended to include the pluralforms, including “at least one,” unless the content clearly indicatesotherwise. “Or” means “and/or.” As used herein, the term “and/or”includes any and all combinations of one or more of the associatedlisted items. It will be further understood that the terms “comprises”and/or “comprising,” or “includes” and/or “including” when used in thisspecification, specify the presence of stated features, regions,integers, steps, operations, elements, and/or components, but do notpreclude the presence or addition of one or more other features,regions, integers, steps, operations, elements, components, and/orgroups thereof.

Furthermore, relative terms, such as “lower” or “bottom” and “upper” or“top,” may be used herein to describe one element's relationship toanother element as illustrated in the Figures. It will be understoodthat relative terms are intended to encompass different orientations ofthe device in addition to the orientation depicted in the Figures. Forexample, if the device in one of the figures is turned over, elementsdescribed as being on the “lower” side of other elements would then beoriented on “upper” sides of the other elements. The exemplary term“lower,” can therefore, encompasses both an orientation of “lower” and“upper,” depending on the particular orientation of the figure.Similarly, if the device in one of the figures is turned over, elementsdescribed as “below” or “beneath” other elements would then be oriented“above” the other elements. The exemplary terms “below” or “beneath”can, therefore, encompass both an orientation of above and below.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which this disclosure belongs. It willbe further understood that terms, such as those defined in commonly useddictionaries, should be interpreted as having a meaning that isconsistent with their meaning in the context of the relevant art and thedisclosure, and will not be interpreted in an idealized or overly formalsense unless expressly so defined herein.

Exemplary embodiments are described herein with reference to crosssection illustrations that are schematic illustrations of idealizedembodiments. As such, variations from the shapes of the illustrations asa result, for example, of manufacturing techniques and/or tolerances,are to be expected. Thus, embodiments described herein should not beconstrued as limited to the particular shapes of regions as illustratedherein but are to include deviations in shapes that result, for example,from manufacturing. For example, a region illustrated or described asflat may, typically, have rough and/or nonlinear features. Moreover,sharp angles that are illustrated may be rounded. Thus, the regionsillustrated in the figures are schematic in nature and their shapes arenot intended to illustrate the precise shape of a region and are notintended to limit the scope of the claims.

In the following embodiments, the x-axis, the y-axis, and the z-axis arenot limited to three axes of the rectangular coordinate system, and maybe interpreted in a broader sense. For example, the x-axis, the y-axis,and the z-axis may be perpendicular to one another, or may representdifferent directions that are not perpendicular to one another.

An embodiment of a display apparatus, which is an apparatus displayingimages, may be a liquid crystal display (“LCD”) apparatus, anelectrophoretic display apparatus, an organic light-emitting displayapparatus, an inorganic light-emitting display apparatus, a fieldemission display (“FED”) apparatus, a surface-conductionelectron-emitter (“SED”) display apparatus, a plasma display apparatus,a cathode ray display apparatus, or the like.

Hereinafter, for convenience of description, embodiments of a displayapparatus, where the display apparatus is an organic light-emittingdisplay apparatus, will be described in detail with reference to theaccompanying drawings, but embodiments of the display apparatus are notlimited thereto, and various types of display apparatuses may be used.

FIG. 1 is a perspective view of a portion of a display apparatusaccording to an embodiment, FIG. 2 is a plan view of a portion of thedisplay apparatus of FIG. 1, and FIG. 3 shows cross-sectional views ofportions of the display apparatus, taken along lines A-A′ and B-B′ ofFIG. 2.

According to an embodiment, a portion of a substrate 100, which is aportion of the display apparatus, is bent as shown in FIG. 1, such thata portion of the display apparatus may have a bent form in the manner ofthe substrate 100. In FIGS. 2 and 3, the display apparatus isillustrated in an unbent state for convenience of illustration. Forreference, in cross-sectional views and plan views of embodiments to bedescribed below, the display apparatus will be illustrated in an unbentstate for convenience of illustration.

In an embodiment, as shown in FIGS. 1 to 3, the substrate 100 includedin the display apparatus may have a bending area BA which extends in afirst direction (+y direction). The bending area BA may be between afirst area 1A and a second area 2A which extend in a second direction(+x direction) crossing the first direction. In one embodiment, forexample, the substrate 100 may be bent around a bending axis BAX whichextends in the first direction (+y direction), as shown in FIG. 1. In anembodiment, as shown in FIG. 1, the substrate 100 may be bent around thebending axis BAX with a uniform radius of curvature, but the embodimentis not limited thereto. Alternatively, the substrate 100 may be bentaround the bending axis BAX with a non-uniform radius of curvature.

In an embodiment, the substrate 100 may include various materials havingflexible or bendable characteristics. In an embodiment, the substrate100 may include, for example, a polymer resin such as polyethersulfone(“PES”), polyacrylate (“PAR”), polyetherimide (“PEI”), polyethylenenaphthalate (“PEN”), polyethylene terephthalate (“PET”), polyphenylenesulfide (“PPS”), polyarylate, polyimide (“PI”), polycarbonate (“PC”), orcellulose acetate propionate (“CAP”). The substrate 100 may have asingle-layered or multi-layered structure including at least one of thematerials above. In an embodiment where the substrate 100 has amulti-layered structure, the substrate 100 may further include aninorganic material layer.

The first area 1A may include a display area DA. In an embodiment, thefirst area 1A may further include a portion of a non-display area NDAoutside the display area DA, as shown in FIG. 2. The second area 2A mayinclude a portion of the non-display area NDA.

A plurality of pixels P may be arranged in the display area DA of thesubstrate 100 to display an image. Elements such as a thin filmtransistor (“TFT”), an organic light-emitting device (“OLED”), and acapacitor may be arranged in the display area DA.

The display area DA may further include signal lines such as a gate lineGL for transmitting a gate signal, a data line DL for transmitting adata signal, a driving power line for transmitting driving power, and acommon power line, and each of the pixels P may be collectively definedby an electrical combination of the TFT, the capacitor, the OLED, etc.,which are connected to the gate line GL, the data line DL, the drivingpower line and the common power line, to display an image. The pixel Pmay emit light at a brightness corresponding to a driving currentpassing through the OLED, in response to a data signal based on adriving power supplied to the pixel P and a common power. The signallines may be connected to a terminal unit 20 of the non-display areaNDA. The plurality of pixels P may be arranged in various forms, such asa stripe array or a PenTile array. The display apparatus may furtherinclude an encapsulation member for encapsulating the display area DA tobe sealed from the outside air.

In an embodiment, the terminal unit 20, a first power supply voltageline 30 and a wiring unit 40 may be arranged in the non-display areaNDA. In such an embodiment, although not shown in FIGS. 1 to 3, a commonpower line, a gate driver, a data driver, etc. may be further arrangedin the non-display area NDA.

The terminal unit 20 may be arranged at an end of the non-display areaNDA and include a plurality of terminals 21 and 22. The terminal unit 20may not be covered by an insulating layer but may be exposed, and may beelectrically connected to a controller (not shown) such as a flexibleprinted circuit board (“PCB”) and a driver integrated circuit (“IC”).The controller may provide the data signal, the gate signal, a firstpower supply voltage, a second power supply voltage, etc., to the pixelsP through the terminal unit 20. Here, the first power supply voltage maybe a driving voltage (ELVDD), and the second power supply voltage may bea common voltage (ELVSS).

The first power supply voltage line 30 may be connected to thecontroller via the terminal 22 and provide the first power supplyvoltage supplied to the pixels P via the controller. The first powersupply voltage line 30 may be arranged in the non-display area NDA tocover a side portion of a surface of the display area DA.

The wiring unit 40 may include a plurality of internal conductive lines213 i connected to the signal lines of the display area DA, a pluralityof external conductive lines 213 o connected to the terminal unit 20 ofthe non-display area NDA, and connection lines 215 connecting theplurality of internal conductive lines 213 i to the plurality ofexternal conductive lines 213 o, respectively.

In an embodiment, the connection lines 215 may overlap the bending areaBA. In such an embodiment, the connection lines 215 may extend from thefirst area 1A to the second area 2A through the bending area BA. Theconnection lines 215 may extend to cross the bending axis BAX. In oneembodiment, for example, the connection lines 215 may extend in adirection perpendicular to the bending axis BAX, but are not limitedthereto. Alternatively, the connection lines 215 may have various othermodifications such as extending in a direction which isnon-perpendicular with respect to the bending axis BAX, and at a certainangle. In an embodiment, the connection lines 215 may have variousforms, such as a curved form and a zigzag form, other than a linearform.

An organic material layer 160 may be arranged around the bending area BAand cover an area, in which the connection lines 215 and the internalconductive lines 213 i are connected to each other, and an area in whichthe connection lines 215 and the external conductive lines 213 o areconnected to each other. In the bending area BA, the organic materiallayer 160 may be arranged under the connection lines 215. The organicmaterial layer 160 will be described later in greater detail.

FIG. 3 shows that an OLED 300 is arranged, as a display element, in thedisplay area DA. In an embodiment, the OLED 300 may be electricallyconnected to a first TFT T1 or a second TFT T2 through a pixel electrode310 thereof. A TFT (not shown) may be arranged in a peripheral areaoutside the display area DA of the substrate 100, as desired. The TFTarranged in the peripheral area may be, for example, a portion of acircuit unit for controlling an electrical signal applied to the displayarea DA.

The first TFT T1 may include a first semiconductor layer Act1 and afirst gate electrode G1, and the second TFT T2 may include a secondsemiconductor layer Act2 and a second gate electrode G2.

Each of the first semiconductor layer Act1 and the second semiconductorlayer Act2 may include amorphous silicon, polycrystalline silicon, anoxide semiconductor material, or an organic semiconductor material. Thefirst semiconductor layer Act1 may include a channel region C1, andfurther include a source region S1 and a drain region D1 arranged (ordisposed) on both sides of the channel region C1, respectively. Thesecond semiconductor layer Act2 may include a channel region C2, andfurther include a source region S2 and a drain region D2 arranged onboth sides of the channel region C2, respectively.

The first gate electrode G1 overlaps the channel region C1 of the firstsemiconductor layer Act1 with a first gate insulating layer 121therebetween, and the second gate electrode G2 overlaps the channelregion C2 of the second semiconductor layer Act2 with the first gateinsulating layer 121 therebetween. The first gate electrode G1 and thesecond gate electrode G2 may be connected to a gate line (not shown)which provides an on/off signal to the first TFT T1 and/or the secondTFT T2, and may include a low-resistance metal material. In oneembodiment, for example, each of the first and second gate electrodes G1and G2 may have a single-layer or multi-layer structure, and may includea conductive material including molybdenum (Mo), aluminum (Al), copper(Cu) and/or titanium (Ti), etc. In an embedment, as shown in FIG. 3, thefirst gate electrode G1 and the second gate electrode G2 are arranged ina same layer as each other, the embodiment is not limited thereto.Alternatively, the first gate electrode G1 and the second gate electrodeG2 may be arranged in different layers from each other.

The second TFT T2 may include a source electrode (not shown) and/or adrain electrode SD (shown in FIG. 12). The source electrode and thedrain electrode SD may have a single-layer or multi-layer structure, andmay include a conductive material having high conductivity. The sourceelectrode and the drain electrode SD may be connected to the sourceregion S2 and the drain region D2 of the second semiconductor layerAct2, respectively. In one embodiment, for example, the source electrodeand the drain electrode SD may have a single-layer or multi-layerstructure, and may include a conductive material, for example, Al, Cu,and/or Ti, etc. The first TFT T1 may include a source electrode and adrain electrode, which are connected to the source region S1 and thedrain region D1 of the first semiconductor layer Act1, respectively, butis not limited thereto. Alternatively, the source region S1 and thedrain region D1 themselves may function as a source electrode and adrain electrode, and a source electrode and a drain electrode may beomitted.

The source electrode and/or the drain electrode SD may be connected tothe second semiconductor layer Act2 via a contact hole. The contact holemay be formed by simultaneously etching an interlayer insulating layer130, a second gate insulating layer 122 and the first gate insulatinglayer 121.

In an embodiment, the first and second TFTs T1 and T2 may be a top gatetype in which the first and second gate electrodes G1 and G2 arearranged above the first and second semiconductor layers Act1 and Act2,respectively, but the embodiment is not limited thereto. In analternative embodiment, the first or second TFT T1 or T2 may be a bottomgate type in which the first or second gate electrode G1 or G2 isarranged under the first or second semiconductor layer Act1 or Act2.

A storage capacitor Cst may overlap the first TFT T1. In such anembodiment, the areas of the storage capacitor Cst and the first TFT T1may be increased, and thus, quality images may be improved. In oneembodiment, for example, the first gate electrode G1 may be a firststorage capacitor plate CE1 of the storage capacitor Cst. A secondstorage capacitor plate CE2 may overlap the first storage capacitorplate CE1 with the second gate insulating layer 122 interposed betweenthe second storage capacitor plate CE2 and the first storage capacitorplate CE1. The second gate insulating layer 122 may include an inorganicinsulating material such as silicon oxide (SiOx), silicon nitride(SiNx), and/or silicon oxynitride (SiON), for example. In an alternativeembodiment, the storage capacitor Cst may not overlap the first TFT T1.

In an embodiment, the first gate insulating layer 121 including aninorganic insulating material such as a silicon oxide, a siliconnitride, and/or a silicon oxynitride may be arranged between the firstsemiconductor layer Act1 and the first gate electrode G1, and betweenthe second semiconductor layer Act2 and the second gate electrode G2,such that insulation between the first semiconductor layer Act1 and thefirst gate electrode G1 and insulation between the second semiconductorlayer Act2 and the second gate electrode G2 may be secured.

The second gate insulating layer 122 including an inorganic insulatingmaterial such as a silicon oxide, a silicon nitride, and/or a siliconoxynitride may be arranged on the first and second gate electrodes G1and G2. The interlayer insulating layer 130 including an inorganicinsulating material such as a silicon oxide, a silicon nitride, and/or asilicon oxynitride may be arranged on the second storage capacitor plateCE2.

The source electrode and the drain electrode SD may be arranged on theinterlayer insulating layer 130. The data line DL may be arranged on theinterlayer insulating layer 130, in a same layer as the source electrodeand the drain electrode SD, and be electrically connected to the sourceelectrode and the drain electrode SD.

In an embodiment, insulating layers including an inorganic material maybe formed via chemical vapor deposition (“CVD”) or atomic layerdeposition (“ALD”). Such a forming method is applicable to theembodiments described above and various modifications thereof to bedescribed below.

A buffer layer 110 including an inorganic material such as a siliconoxide, a silicon nitride, and/or a silicon oxynitride may be arrangedbetween the first and second TFTs T1 and T2 and the substrate 100 in theabove-described structure. The buffer layer 110 may provide a flatnesssurface on the substrate 100, or effectively prevent or substantiallyreduce infiltration of impurities from the substrate 100, etc. to thefirst and second semiconductor layers Act1 and Act2. The buffer layer110 may include an inorganic material, such as an oxide or a nitride, anorganic material, or a combination thereof, and have a single-layer ormulti-layer structure. In some embodiments, the buffer layer 110 mayhave a triple-layered structure including a silicon oxide layer, asilicon nitride layer, and a silicon oxynitride layer.

A planarization layer 140 may be arranged over the first and second TFTsT1 and T2 and the storage capacitor Cst. The planarization layer 140 maycover the first and second TFTs T1 and T2 and the storage capacitor Cst.An upper surface of the planarization layer 140 may be substantiallyplanarized. The planarization layer 140 may include an organic materialsuch as acryl, benzocyclobutene (“BCB”), and hexamethyldisiloxane(“HMDSO”), for example. In an embodiment, as shown in FIG. 3, theplanarization layer 140 may have a single-layer structure, but not beinglimited thereto. In an alternative embodiment, the planarization layer140 may be variously modified. In one alternative embodiment, forexample, the planarization layer 140 may have a multi-layered structure.

In an embodiment, the OLED 300 including the pixel electrode 310, anopposite electrode 330, and an intermediate layer 320 interposedtherebetween and including a light-emitting layer, may be arranged onthe planarization layer 140 in the display area DA of the substrate 100.The pixel electrode 310 may contact any one of the source electrode andthe drain electrode SD via an opening defined through the planarizationlayer 140, etc., and be electrically connected to the second TFT T2, asshown in FIG. 3.

A pixel-defining layer 150 may be arranged on the planarization layer140. An opening may be defined in the pixel-defining layer 150 tocorrespond to respective sub-pixels, that is, the opening exposes atleast a central portion of the pixel electrode 310 to be exposed,thereby defining a pixel. In an embodiment, as shown in FIG. 3, thepixel-defining layer 150 may effectively prevent occurrence of an arc,etc. on an edge of the pixel electrode 310 by increasing a distancebetween the edge of the pixel electrode 310 and the opposite electrode330 above the pixel electrode 310. The pixel-defining layer 150 mayinclude, for example, an organic material such as PI and HMDSO.

The intermediate layer 320 of the OLED 300 may include a low molecularweight material or a high molecular weight (polymer) material. In anembodiment, where the intermediate layer 320 includes a low molecularweight material, the intermediate layer 320 may have a structure inwhich a hole injection layer (“HIL”), a hole transport layer (“HTL”), anemission layer (“EML”), an electron transport layer (“ETL”), an electroninjection layer (“EIL”), etc. are stacked in a single or compositestructure, and may include at least one of various organic materialssuch as copper phthalocyanine (“CuPc”),N,N′-Di(naphthalene-1-yl)-N,N′-diphenyl-benzidine (“NPB”), andtris-8-hydroxyquinoline aluminum (“Alq3”). The above-described layersmay be formed via a vacuum deposition method.

In an alternative embodiment, where the intermediate layer 320 includesa high molecular weight material, the intermediate layer 320 may have astructure which generally includes an HTL and an EML. In such anembodiment, the HTL may include poly(3,4-ethylenedioxythiophene)(“PEDOT”), and the EML may include a high molecular weight material suchas poly-phenylenevinylene (“PPV”) or polyfluorene. In such an embodimentthe intermediate layer 320 may be formed via screen printing, inkjetprinting, laser induced thermal imaging (“LITI”), etc.

The intermediate layer 320 is not limited thereto and may have one ofvarious other structures. In an embodiment, the intermediate layer 320may include an integrated layer covering a plurality of pixel electrodes310, or may include a patterned layer corresponding to each of theplurality of pixel electrodes 310.

The opposite electrode 330 may be arranged on a top portion of thedisplay area DA and cover the display area DA, as illustrated in FIG. 3.In such an embodiment, the opposite electrode 330 may be integrallyformed at a single unitary unit for a plurality of OLEDs 300, and thusmay correspond to the plurality of pixel electrodes 310.

In an embodiment, an encapsulation layer 400 may protect the OLEDs 300,which may be easily damaged by humidity, oxygen, etc. from the outside,by encapsulating the OLEDs 300. The encapsulation layer 400 may coverthe display area DA and extend to the outside of the display area DA.The encapsulation layer 400 may include a first inorganic encapsulationlayer 410, an organic encapsulation layer 420, and a second inorganicencapsulation layer 430.

The first inorganic encapsulation layer 410 may cover the oppositeelectrode 330 and may include at least one of a ceramic material, ametal oxide, a metal nitride, a metal carbide, a metal oxynitride,indium oxide (InO), tin oxide (SnO), indium tin oxide (“ITO”), siliconoxide, silicon nitride, and silicon oxynitride, etc. Other layers suchas a capping layer may be arranged between the first inorganicencapsulation layer 410 and the opposite electrode 330, if desired.Since the first inorganic encapsulation layer 410 is formed along astructure thereunder, an upper surface of the first inorganicencapsulation layer 410 may not be flat, as shown in FIG. 3. The organicencapsulation layer 420 may cover the first inorganic encapsulationlayer 410, and an upper surface thereof may be substantially flat,unlike the first inorganic encapsulation layer 410. In detail, the uppersurface of the organic encapsulation layer 420 may be substantially flatin an area corresponding to the display area DA. The organicencapsulation layer 420 may include at least one selected from acrylic,methacrylic, polyester, polyethylene, polypropylene, PET, PEN, PC, PI,polyethylene sulfonate (“PES”), polyoxymethylene (“POM”), polyarylate,and hexamethyldisiloxane. The second inorganic encapsulation layer 430may cover the organic encapsulation layer 420 and may include at leastone of a ceramic material, a metal oxide, a metal nitride, a metalcarbide, a metal oxynitride, InO, SnO, ITO, silicon oxide, siliconnitride, and silicon oxynitride, etc. The second inorganic encapsulationlayer 430 may effectively prevent the organic encapsulation layer 420from being exposed to the outside by contacting the first inorganicencapsulation layer 410 at an edge arranged outside the display area DA,as shown in FIG. 3.

In an embodiment, as shown in FIGS. 2 and 3, the encapsulation layer 400covers at least a portion of the first power supply voltage line 30, butthe embodiment is not limited thereto. In one embodiment, for example,the encapsulation layer 400 may not cover the first power supply voltageline 30, but may cover only an area corresponding to the display areaDA.

In an embodiment, where the encapsulation layer 400 includes the firstinorganic encapsulation layer 410, the organic encapsulation layer 420and the second inorganic encapsulation layer 430, even when a crackforms in the encapsulation layer 400 through the multi-layeredstructure, the crack may not be connected between the first inorganicencapsulation layer 410 and the organic encapsulation layer 420 orbetween the organic encapsulation layer 420 and the second inorganicencapsulation layer 430. In such an embodiment, the formation of aroute, through which humidity or oxygen from the outside may penetrateinto the display area DA, may effectively prevented or substantiallyminimized. Although not shown in the drawings, various functionallayers, such as a polarizing layer for reducing external lightreflection, a black matrix, a color filter, and/or a touch screen layerincluding a touch electrode, may be provided on the encapsulation layer400.

The buffer layer 110, the first gate insulating layer 121, the secondgate insulating layer 122 and the interlayer insulating layer 130, eachof which includes an inorganic material, may be collectively referred toas an inorganic insulating layer 125. In an embodiment, an opening OP isdefined through the inorganic insulating layer 125 in a regioncorresponding to the bending area BA, as shown in FIG. 3. In such anembodiment, an opening 110 a, an opening 121 a, an opening 122 a and anopening 130 a, which correspond to the bending area BA, are definedthrough the buffer layer 110, the first gate insulating layer 121, thesecond gate insulating layer 122 and the interlayer insulating layer130, respectively. In such an embodiment, where the opening OPcorresponds to the bending area BA, the opening OP overlaps the bendingarea BA. In an embodiment, an area of the opening OP may be larger thanthat of the bending area BA. In such an embodiment, as shown in FIG. 3,a width OW of the opening OP may be greater than a width of the bendingarea BA. Here, the area of the opening OP may be defined as the area ofan opening with the smallest area among the opening 110 a of the bufferlayer 110, the opening 121 a of the first gate insulating layer 121, theopening 122 a of the second gate insulating layer 122 and the opening130 a of the interlayer insulating layer 130. In an embodiment, as shownin FIG. 3, the area of the opening OP of the inorganic insulating layer125 may be defined by the area of the opening 110 a of the buffer layer110.

In an embodiment, as shown in FIG. 3, an inner surface of the opening110 a of the buffer layer 110 and an inner surface of the opening 121 aof the first gate insulating layer 121 coincide with each other, but theembodiment is not limited thereto. In one alternative embodiment, forexample, the area of the opening 121 a of the first gate insulatinglayer 121 may be larger than that of the opening 110 a of the bufferlayer 110.

In an embodiment, the display apparatus may include the organic materiallayer 160 filling the opening OP of the inorganic insulating layer 125.In such an embodiment, the organic material layer 160 may overlap thebending area BA. The organic material layer 160 may extend to a portionof a non-bending area around the bending area BA.

In an embodiment, the display apparatus may include a connection line215. The connection line 215 may extend from the first area 1A to thesecond area 2A through the bending area BA and may be arranged on theorganic material layer 160. The connection line 215 may be arranged onthe inorganic insulating layer 125, for example, on the interlayerinsulating layer 130, where the organic material layer 160 is notpresent. The connection line 215 may transmit an electrical signal tothe display area DA, and may be formed simultaneously with the sourceelectrode, the drain electrode SD or the data line DL, with a samematerial.

As described above, in FIG. 3, the display apparatus is illustrated asbeing unbent for the sake of convenience. However, the substrate 100,etc. of the display apparatus may be in a bent state in the bending areaBA, as shown in FIG. 1. In an embodiment, the display apparatus ismanufactured in a state where the substrate 100 is approximately flat asshown in FIG. 3 in a manufacturing process, and thereafter, thesubstrate 100, etc. are bent in the bending area BA so that the displayapparatus has a shape as shown in FIG. 1. In such an embodiment, tensilestress may be applied to the connection line 215 in a process in whichthe substrate 100, etc. are bent in the bending area BA. In anembodiment of the display apparatus, an occurrence of defects in theconnection line 215 during the bending process may be effectivelyprevented or substantially reduced.

In such an embodiment, if the opening OP is not defined or formedthrough the inorganic insulating layer 125 in the bending area BA andthus, the inorganic insulating layer 125 has a continuous shape from thefirst area 1A to the second area 2A and the connection line 215 isarranged on the inorganic insulating layer 125, high tensile stress maybe applied to the connection line 215 in a process in which thesubstrate 100, etc. are bent. Since hardness of the inorganic insulatinglayer 125 is greater than that of the organic material layer 160, theremay be a very high probability that a crack, etc. occur in the inorganicinsulating layer 125 in the bending area BA. Accordingly, when a crackforms in the inorganic insulating layer 125, there may be a very highprobability that a crack, etc. occur in the connection line 215 on theinorganic insulating layer 125, and thus defects such as broken wiringin the connection line 215 may occur.

In an embodiment of the display apparatus, the opening OP is definedthrough the inorganic insulating layer 125 in the bending area BA, asdescribed above, and the connection line 215 may be arranged on theorganic material layer 160 which fills the opening OP. In such anembodiment, since the opening OP is defined through the inorganicinsulating layer 125 in the bending area BA, the probability thatcracks, etc. occur in the inorganic insulating layer 125 may besubstantially low. Here, the probability of a crack forming in theorganic material layer 160 is low due to characteristics of organicmaterials. Thus, the formation of cracks, etc. in the connection line215 arranged on the organic material layer 160 may be effectivelyprevented or the probability of crack formation may be reduced. In suchan embodiment, since the hardness of the organic material layer 160 isless than that of the inorganic material layer, the organic materiallayer 160 may absorb the tensile stress caused by the bending of thesubstrate 100, etc., and thus, the concentration of the tensile stressin the connection line 215 may be effectively reduced.

The organic material layer 160 may include at least one selected fromacrylic, methacrylic, polyester, polyethylene, polypropylene, PET, PEN,PC, PI, PES, POM, polyallylate, and hexamethyldisiloxane.

The organic material layer 160 may be formed when a layer including anorganic material, included in the display area DA, is formed, with thesame material as the layer. In an embodiment, when the planarizationlayer 140 or the pixel-defining layer 150 is formed, the organicmaterial layer 160 may be simultaneously formed with a same material asthe planarization layer 140 or the pixel-defining layer 150. In oneembodiment, for example, the organic material layer 160 may besimultaneously formed with the pixel-defining layer 150, using a samematerial. In one alternative embodiment, for example, the organicmaterial layer 160 may be simultaneously formed with the organicencapsulation layer 420 of the encapsulation layer 400, using a samematerial.

In an embodiment, the organic material layer 160 may be spaced apartfrom a layer in the display area DA including an organic material. Inone embodiment, for example, as shown in FIG. 3, the organic materiallayer 160 may be spaced apart from the planarization layer 140 and thepixel-defining layer 150 in the display area DA.

In an embodiment, the organic material layer 160 may be spaced apartfrom at least one of the organic encapsulation layers (e.g., the firstorganic encapsulation layer 420) in the encapsulation layer 400. In anembodiment, as shown in FIG. 3, the first inorganic encapsulation layer410 and the second inorganic encapsulation layer 430 are spaced apartfrom the organic material layer 160, but the embodiment is not limitedthereto. In one alternative embodiment, for example, a portion of thefirst or second inorganic encapsulation layer 410 or 430 of theencapsulation layer 400 may be in contact with the organic materiallayer 160.

In an embodiment, the display apparatus may include the internalconductive line 213 i and the external conductive line 213 o, bothconnected to the connection line 215, in addition to the connection line215. The internal conductive line 213 i and the external conductive line213 o may be arranged in the first area 1A or the second area 2A so thatthe internal conductive line 213 i and the external conductive line 213o are positioned in a layer different from a layer in which theconnection line 215 is positioned, and may be electrically connected tothe connection line 215.

In an exemplary embodiment, as shown in FIG. 3, the internal conductiveline 213 i is positioned in the first area 1A and the externalconductive line 213 o is positioned in the second area 2A. In anembodiment, as shown in FIG. 3, the internal conductive line 213 i andthe external conductive line 213 o include a same material as the firstgate electrode G1 and are positioned in a same layer as the first gateelectrode G1, that is, on the first gate insulating layer 121.

The connection line 215 may contact the internal conductive line 213 iand the external conductive line 213 o via organic through-holes 160 hdefined in the organic material layer 160 and contact holes CNT definedthrough the interlayer insulating layer 130 and the second gateinsulating layer 122. Each organic through-hole 160 h exposes an uppersurface of a portion of the inorganic insulating layer 125, and thecontact hole CNT is defined to overlap a respective organic through-hole160 h. In an embodiment, as shown in FIG. 3, two contact holes CNT maybe arranged in one organic through-hole 160 h, but the embodiment is notlimited thereto. In such an embodiment, the number of contact holes CNTarranged in one organic through-hole 160 h may be variously modified.

The internal conductive line 213 i in the first area 1A may beelectrically connected to the first and second TFTs T1 and T2 in thedisplay area DA, and accordingly, the connection line 215 may beelectrically connected to the first and second TFTs T1 and T2 in thedisplay area DA and/or the data line DL via the internal conductive line213 i. In an embodiment, the internal conductive line 213 i may beconnected, via a contact hole, to a conductive layer arranged in anotherlayer in the display area DA, for example, a conductive layer on theinterlayer insulating layer 130 or a conductive layer on the second gateinsulating layer 122.

The external conductive line 213 o in the second area 2A may beelectrically connected to the first and second TFTs T1 and T2 in thedisplay area DA and/or the data line DL via the connection line 215. Inan embodiment, the external conductive line 213 o may be connected, viaa contact hole, to a conductive layer arranged in another layer in thesecond area 2A, for example, a conductive layer on the interlayerinsulating layer 130 or a conductive layer on the second gate insulatinglayer 122.

In such an embodiment, the internal conductive line 213 i and theexternal conductive line 213 o may be electrically connected tocomponents positioned in the display area DA, while being positionedoutside the display area DA. In such an embodiment, the internalconductive line 213 i and the external conductive line 213 o may extendin a direction of the display area DA while being positioned outside thedisplay area DA, and thus, at least portions of the internal andexternal conductive lines 213 i and 213 o may be in the display area DA.

Hereinabove, the display apparatus in an unbent state is illustrated inFIG. 3 for convenience of illustration and description; however, anembodiment of the display apparatus is in a state in which the substrate100, etc. are bent in the bending area BA, as shown in FIG. 1. In suchan embodiment, the display apparatus is manufactured in a state wherethe substrate 100 is approximately flat as shown in FIG. 3 in amanufacturing process, and thereafter, the substrate 100, etc. are bentin the bending area BA so that the display apparatus has a shape asshown in FIG. 1. In such an embodiment, tensile stress may be applied tocomponents in the bending area BA in a process in which the substrate100, etc. are bent in the bending area BA.

Accordingly, in such an embodiment, where the connection line 215crosses the bending area BA, the formation of a crack in the connectionline 215 or defects such as broken wiring in the connection line 215 maybe prevented by including a material with a high elongation percentage.In such an embodiment, by forming the internal and external conductivelines 213 i and 213 o in the first area 1A or the second area 2A with amaterial which has an elongation percentage lower than that of theconnection line 215 and has electrical/physical characteristicsdifferent from those of the connection line 215, an efficiency ofelectrical signal transfer in the display apparatus may be enhanced or arate of occurrence of defects in the manufacturing process may bereduced. In one embodiment, for example, the internal and externalconductive lines 213 i and 213 o may include Mo, and the connection line215 may include Al. In an embodiment, either the connection line 215 orthe internal and external conductive lines 213 i and 213 o mayselectively have a multi-layered structure. An end of the externalconductive line 213 o in the second area 2A may be exposed to theoutside, and thus may be electrically connected to various electronicdevices or a printed circuit board.

In an embodiment, the organic material layer 160 extends to a contactarea where the connection line 215 is connected to the internalconductive line 213 i and the external conductive line 213 o. Theorganic through-holes 160 h are defined or formed in the organicmaterial layer 160 so that the connection line 215 is connected to theinternal conductive line 213 i and the external conductive line 213 ovia the organic through-holes 160 h. In such an embodiment, theconnection line 215 is allowed to be in contact with the inorganicinsulating layer 125 only via the organic through-holes 160 h, and thus,short-circuiting with an adjacent connection line 215, which may becaused by a conductive material remaining in a process of patterning theconnection line 215, may be effectively prevented.

In an alternative embodiment, the interlayer insulating layer 130 or thesecond gate insulating layer 122 of the inorganic insulating layer 125around the bending area BA may be omitted. In such an embodiment, onlyone of the interlayer insulating layer 130 and the second gateinsulating layer 122 may be arranged between the connection line 215 andthe internal conductive line 213 i, in an organic through-hole 160 h,and thus, a contact hole CNT for connecting the connection line 215 tothe internal conductive line 213 i may only penetrate the interlayerinsulating layer 130 or the second gate insulating layer 122.

In another alternative embodiment, only one of the interlayer insulatinglayer 130 and the second gate insulating layer 122 may be arrangedbetween the connection line 215 and the external conductive line 213 o,in an organic through-hole 160 h, and thus, a contact hole CNT forconnecting the connection line 215 to the external conductive line 213 omay only penetrate the interlayer insulating layer 130 or the secondgate insulating layer 122.

The inorganic insulating layer 125 arranged between the connection line215 and the internal conductive line 213 i and between the connectionline 215 and the external conductive line 213 o may be variouslymodified. In one embodiment, for example, only the interlayer insulatinglayer 130 may be between the connection line 215 and the internalconductive line 213 i and between the connection line 215 and theexternal conductive line 213 o. Alternatively, only the interlayerinsulating layer 130 may be present between the connection line 215 andthe internal conductive line 213 i, and only the second gate insulatinglayer 122 may be between the connection line 215 and the externalconductive line 213 o.

FIGS. 4 and 5 are cross-sectional views of portions of displayapparatuses according to alternative embodiments. In FIGS. 4 and 5, thesame reference numerals as those in FIG. 3 denote the same or likeelements, and any repetitive detailed descriptions thereof will beomitted or simplified.

In an embodiment, as shown in FIG. 4, an internal conductive line 213 iand an external conductive line 213 o include a same material as asecond storage capacitor plate CE2 and are positioned in a same layer asthe second storage capacitor plate CE2, that is, on a second gateinsulating layer 122.

A connection line 215 may contact the internal conductive line 213 i andthe external conductive line 213 o via organic through-holes 160 hdefined in an organic material layer 160 and contact holes CNT definedthrough an interlayer insulating layer 130 and the second gateinsulating layer 122. Each of the organic through-holes 160 h exposes anupper surface of a portion of an inorganic insulating layer 125, and thecontact holes CNT are defined in the portion of the organicthrough-holes 160 h. In an embodiment, as shown in FIG. 3, two contactholes CNT may be arranged in one organic through-hole 160 h, but theembodiment is not limited thereto. In such an embodiment, the number ofcontact holes CNT arranged in one organic through-hole 160 h may bevariously modified.

The internal conductive line 213 i in a first area 1A may beelectrically connected to the first and second TFTs T1 and T2 in thedisplay area DA and/or the data line DL, and accordingly, the connectionline 215 may be electrically connected to the first and second TFTs T1and T2, etc. in the display area DA via the internal conductive line 213i. In an embodiment, the internal conductive line 213 i may beconnected, via a contact hole, to a conductive layer arranged in anotherlayer in the display area DA, for example, a conductive layer on theinterlayer insulating layer 130 or a conductive layer on the first gateinsulating layer 121.

The external conductive line 213 o in a second area 2A may beelectrically connected to the first and second TFTs T1 and T2 in thedisplay area DA and/or the data line DL via the connection line 215. Inan embodiment, the external conductive line 213 o may be connected, viaa contact hole, to a conductive layer arranged in another layer in thesecond area 2A, for example, a conductive layer on the interlayerinsulating layer 130 or a conductive layer on the first gate insulatinglayer 121.

In such an embodiment, the internal conductive line 213 i and theexternal conductive line 213 o may be electrically connected tocomponents positioned in the display area DA, while being positionedoutside the display area DA. In such an embodiment, the internalconductive line 213 i and the external conductive line 213 o may extendin a direction of the display area DA while being positioned outside thedisplay area DA, and thus, at least portions of the internal andexternal conductive lines 213 i and 213 o may be in the display area DA.

Referring to FIG. 5, in an embodiment of the display apparatus, theinternal conductive line 213 i and the external conductive line 213 o,connected to each other, may be arranged in different layers. FIG. 5illustrates an embodiment where the internal conductive line 213 iincludes the same material as the first gate electrode G1 and isarranged in a same layer as the first gate electrode G1, and theexternal conductive line 213 o includes a same material as the secondstorage capacitor plate CE2 and is arranged in a same layer as thesecond storage capacitor plate CE2. However, the embodiment is notlimited thereto. In one alternative embodiment, for example, theinternal conductive line 213 i may include a same material as the secondstorage capacitor plate CE2 and may be arranged in a same layer as thesecond storage capacitor plate CE2, and the external conductive line 213o may include a same material as the first gate electrode G1 and may bearranged in a same layer as the first gate electrode G1.

The connection line 215 may contact the internal conductive line 213 ivia the organic through-hole 160 h defined in the organic material layer160 and the contact hole CNT1 defined through the interlayer insulatinglayer 130 and the second gate insulating layer 122, and may contact theexternal conductive line 213 o via the organic through-hole 160 hdefined in the organic material layer 160 and the contact hole CNT2defined through the interlayer insulating layer 130.

The internal conductive line 213 i in a first area 1A may beelectrically connected to first and second TFTs T1 and T2, etc. in thedisplay area DA, and accordingly, the connection line 215 may beelectrically connected to the first and second TFTs T1 and T2 in thedisplay area DA and/or the data line DL via the internal conductive line213 i. In an embodiment, the internal conductive line 213 i may beconnected, via a contact hole, to a conductive layer arranged in anotherlayer in the display area DA, for example, a conductive layer on theinterlayer insulating layer 130 or a conductive layer on the second gateinsulating layer 122.

The external conductive line 213 o in the second area 2A may also beelectrically connected to the first and second TFTs T1 and T2 in thedisplay area DA and/or the data line DL via the connection line 215. Inan embodiment, the external conductive line 213 o may be connected, viaa contact hole, to a conductive layer arranged in another layer in thesecond area 2A, for example, a conductive layer on the interlayerinsulating layer 130 or a conductive layer on the first gate insulatinglayer 121.

In such an embodiment, the internal conductive line 213 i and theexternal conductive line 213 o may be electrically connected tocomponents positioned in the display area DA, while being positionedoutside the display area DA. In such an embodiment, the internalconductive line 213 i and the external conductive line 213 o may extendin a direction of the display area DA while being positioned outside thedisplay area DA, and thus, at least portions of the internal andexternal conductive lines 213 i and 213 o may be in the display area DA.

In some embodiments, the arrangement of the internal conductive line 213i and the external conductive line 213 o may be variously modified. Inone embodiment, for example, some of a plurality of internal andexternal conductive lines 213 i and 213 o may include a same material asthe first gate electrode G1 and may be arranged in a same layer as thefirst gate electrode G1, and the remaining of the plurality of internaland external conductive lines 213 i and 213 o may include a samematerial as the second storage capacitor plate CE2 and may be arrangedin a same layer as the second storage capacitor plate CE2.

FIG. 6 is an enlarged plan view of a portion I of FIG. 2. FIG. 7 is across-sectional perspective view taken along line II-II′ of FIG. 6. FIG.8 is a cross-sectional view taken along line III-III′ of FIG. 6. FIG. 9is a cross-sectional view showing a portion of a comparative embodimentof a display apparatus.

Referring to FIGS. 6 and 7, in an embodiment, the organic through-hole160 h includes a plurality of first organic through-holes 160 h 1arranged in a first direction (+Y direction). In such an embodiment, theorganic through-hole 160 h may further include a plurality of secondorganic through-holes 160 h 2 which are not collinear with the firstorganic through-holes 160 h 1 in the X direction. Accordingly, the firstorganic through-holes 160 h 1 and the second organic through-holes 160 h2 are not arranged linearly on a same line but are staggered relative toeach other. Since the first organic through-holes 160 h 1 and the secondorganic through-holes 160 h 2 are staggered relative to each other, moreorganic through-holes 160 h may be arranged in a limited space having asmall width in the X direction. Accordingly, a large number of contactareas through which the connection line 215 and the internal andexternal conductive lines 213 i and 213 o are connected may be arrangedin a narrow space, and thus, the interval between the connection lines215 may be reduced.

In such an embodiment, since the first organic through-holes 160 h 1 andthe second organic through-holes 160 h 2 are staggered relative to eachother, a portion of the connection line 215 may pass between the firstorganic through-holes 160 h 1. Thus, the width of the connection line215 may be variously modified. In one embodiment, for example, a widthW2 of a portion of the connection line 215 passing between the firstorganic through-holes 160 h 1 may be less than a width W1 of theconnection line 215 connecting the second organic through-holes 160 h 2.

The number of the first organic through-holes 160 h 1 and the number ofthe second organic through-holes 160 h 2 may be different from eachother. In an embodiment, as shown in FIG. 6, two contact holes CNTconnecting the connection line 215 to the internal conductive line 213 iare provided in the first organic through-hole 160 h 1 or the secondorganic through-hole 160 h 2. However, the number of the contact holesCNT is not limited thereto. The number of the contact holes CNT arrangedin the first organic through-hole 160 h 1 may be different from thenumber of the contact holes CNT arranged in the second organicthrough-hole 160 h 2.

Referring to FIG. 7, in an embodiment, an upper surface (+Z direction)of the organic material layer 160 arranged between the first organicthrough-holes 160 h 1 has a convex curved form. The upper surface of theorganic material layer 160 may have a curved surface and have a heightthat is largest in the middle and gradually decreases toward the firstorganic through-holes 160 h 1. In such an embodiment, the upper surfaceof the organic material layer 160 arranged between the first organicthrough-holes 160 h 1 is not flat.

According to embodiments, adjacent first organic through-holes 160 h 1may be close to each other, and the upper surface of the organicmaterial layer 160 arranged therebetween may have a convex curvedsurface such that a large number of connection lines 215, a large numberof internal conductive lines 213 i, and a large number of externalconductive lines 213 o are allowed to be arranged in a narrow space. Thecloser adjacent first organic through-holes 160 h 1 are to each other,the smaller a radius of curvature of the upper surface of the organicmaterial layer 160 arranged therebetween.

In an embodiment, the connection line 215 may be arranged on the uppersurface of the organic material layer 160 arranged between the firstorganic through-holes 160 h 1. In such an embodiment, the connectionline 215 may have a curved surface in the width direction (±Ydirection), corresponding to the shape of the upper surface of theorganic material layer 160.

Referring to FIGS. 6 and 8, an end of the connection line 215 may bearranged in the organic through-hole 160 h. an end of the internalconductive line 213 i may overlap the inside of the organic through-hole160 h, and thus, the end of the connection line 215 and the end of theinternal conductive line 213 i may be electrically connected to eachother via a contact hole CNT defined through the interlayer insulatinglayer 130 and the second gate insulating layer 122.

In an embodiment, the organic through-hole 160 h exposes the uppersurface of the interlayer insulating layer 130, and a portion of theconnection line 215 is arranged on the interlayer insulating layer 130in the organic through-hole 160 h. In such an embodiment, the connectionline 215 extends from the upper surface of the organic material layer160 to the upper surface of the interlayer insulating layer 130 in theorganic through-hole 160 h. In such an embodiment, the connection line215 may be subjected to stress depending on the shape of a structureunder the connection line 215. In an embodiment, a lower edge of theorganic through-hole 160 h and one end of the internal conductive line213 i are horizontally spaced apart from each other not to overlap eachother such that stress which the connection line 215 may receive in acontact area is substantially reduced.

If a lower edge of the organic through-hole 160 h and one end of theinternal conductive line 213 i overlap each other as in a comparativeembodiment shown in FIG. 9 corresponding to FIG. 8, a step formed ininorganic insulating layers, such as the second gate insulating layer122 arranged on the internal conductive line 213 i and the interlayerinsulating layer 130, and a boundary of the organic material layer 160are close to each other, and thus, a structure under the connection line215 forms many steps. As a result, the probability of a crack CRforming, due to an influence of the steps, is relatively high in theconnection line 215 passing over the structure.

In an embodiment, as described above, an end of the internal conductiveline 213 i may be arranged not to overlap a lower edge of the organicthrough-hole 160 h, thereby effectively preventing the formation of acrack in the connection line 215. In an embodiment, as shown in FIGS. 6and 8, a distance d between the lower edge of the organic through-hole160 h and an end of the internal conductive line 213 i may be in a rangeof about 4 micrometers (μm) to about 8 μm.

FIG. 10 is a plan view of a portion of a display apparatus according toan alternative embodiment, which shows an area corresponding to theportion I of FIG. 2. FIG. 11 is a cross-sectional view taken along lineIV-IV′ of FIG. 10.

Referring to FIGS. 10 and 11, in an embodiment, internal conductivelines 213 i may include first internal conductive lines 213 i-1 andsecond internal conductive lines 213 i-2, arranged in different layers.In such an embodiment, the first internal conductive lines 213 i-1 maybe arranged on the first gate insulating layer 121, and may include(e.g., be formed of) a same material as the first gate electrode G1, ina same layer as the first gate electrode G1. In such an embodiment, thesecond internal conductive lines 213 i-2 may be arranged on the secondgate insulating layer 122, and may include a same material as the secondstorage capacitor plate CE2, in a same layer as the second storagecapacitor plate CE2. In an embodiment, as shown in FIGS. 10 and 11, thefirst internal conductive lines 213 i-1 and the second internalconductive lines 213 i-2 may be alternately arranged. However, theembodiment is not limited thereto. In such an embodiment, thearrangement order of the first internal conductive lines 213 i-1 and thesecond internal conductive lines 213 i-2 may be variously modified.

In an embodiment, as shown in FIG. 11, the first internal conductivelines 213 i-1 and the second internal conductive lines 213 i-2 areinsulated from each other by the second gate insulating layer 122therebetween, and are in different layers from each other. The firstinternal conductive lines 213 i-1 and the second internal conductivelines 213 i-2 may be arranged not to overlap each other to reduceparasitic capacitance that may occur between the first internalconductive lines 213 i-1 and the second internal conductive lines 213i-2. In an alternative embodiment, the first internal conductive lines213 i-1 and the second internal conductive lines 213 i-2 may be arrangedto overlap each other at least partially.

In an embodiment, the external conductive lines 213 o (see FIG. 2) mayinclude first external conductive lines and second external conductivelines, arranged in different layers from each other. In such anembodiment, the first external conductive lines may be arranged on thefirst gate insulating layer 121, and may include a same material as thefirst gate electrode G1, in a same layer as the first gate electrode G1.In such an embodiment, the second external conductive lines may bearranged on the second gate insulating layer 122, and may include of asame material as the second storage capacitor plate CE2, in a same layeras the second storage capacitor plate CE2. In an embodiment, the firstexternal conductive lines and the second external conductive lines maybe alternately arranged. However, the embodiment is not limited thereto.In such an embodiment, the arrangement order of the first externalconductive lines and the second external conductive lines may bevariously modified.

The first external conductive lines and the second external conductivelines are insulated from each other by the second gate insulating layer122 therebetween, and are in different layers from each other. In anembodiment, the first external conductive lines and the second externalconductive lines may be arranged not to overlap each other. However, inan alternative embodiment, the first external conductive lines and thesecond external conductive lines may be arranged to overlap each otherat least partially.

FIG. 12 is a cross-sectional view of portions of a display apparatusaccording to another alternative embodiment. In FIG. 12, the samereference numerals as those in FIG. 3 denote the same or like elements,and any repetitive detailed descriptions thereof will be omitted.

Referring to FIG. 12, in an embodiment, a display area DA includes afirst planarization layer 141 covering the drain electrode SD and thedata line DL and arranged on the interlayer insulating layer 130, aconductive layer PL arranged on the first planarization layer 141, and asecond planarization layer 142 covering the conductive layer PL andarranged on the first planarization layer 141. The connection line 215may include or be formed of a same material as the data line DL or theconductive layer PL, simultaneously with the data line DL or theconductive layer PL.

The first and second planarization layers 141 and 142, which areinsulating layers, may include an organic material. The organic materialmay include at least one of an imide polymer, a general purpose polymersuch as polymethylmethacrylate (“PMMA”) or polystyrene (“PS”), a polymerderivative having a phenolic group, an acrylic polymer, an aryletherpolymer, an amide polymer, a fluorine polymer, a p-xylene polymer, avinyl alcohol polymer, and a combination (e.g., blend) thereof. Thefirst planarization layer 141 and the second planarization layer 142 mayinclude an inorganic material such as silicon oxide, silicon nitride,and/or silicon oxynitride. Alternatively, the first planarization layer141 may include an inorganic material, and the second planarizationlayer 142 may include an organic material. The first planarization layer141 and the second planarization layer 142 may have a single layered ormulti-layered structure.

The conductive layer PL arranged on the first planarization layer 141may function as a voltage line for transmitting a power supply voltageor a data line for transmitting a data signal. The conductive layer PLarranged on the first planarization layer 141 may be connected to thedata line DL through a contact hole defined in the first planarizationlayer 141. The conductive layer PL may include molybdenum (Mo), aluminum(Al), copper (Cu), titanium (Ti), and the like, and may have a singlelayered or multi-layered structure. The conductive layer PL may have ahigher elongation percentage than the first and second gate electrodesG1 and G2 or the second storage capacitor plate CE2.

In an embodiment, the connection line 215 may include or be formed of asame material as the conductive layer PL, simultaneously with theconductive layer PL. However, the embodiment is not limited thereto. Inone alternative embodiment, for example, the connection line 215 may beformed of a same material as the data line DL, simultaneously with thedata line DL arranged on the interlayer insulating layer 130.Alternatively, some of the connection lines 215 may be formed of a samematerial as the conductive layer PL, simultaneously with the conductivelayer PL, and the remaining connection lines 215 may be formed of a samematerial as the data line DL, simultaneously with the data line DL.

In an embodiment, where the connection line 215 is formed of a samematerial as the conductive layer PL and simultaneously with theconductive layer PL, the organic material layer 160 may be formed of asame material as the first planarization layer 141, simultaneously withthe first planarization layer 141. In such an embodiment, since theorganic material layer 160 may be formed simultaneously with the firstplanarization layer 141, a process of manufacturing the displayapparatus may be simplified.

FIG. 13 is a cross-sectional view of a portion of a display apparatusaccording to another alternative embodiment. More particularly, FIG. 13is a cross-sectional view schematically illustrating the vicinity of abending area BA.

Referring to FIG. 13, in an embodiment, an inner surface of the openingOP in the inorganic insulating layer 125 may have a stepped form. Insuch an embodiment, as shown in FIG. 13, the area of the opening 121 ain the first gate insulating layer 121 may be larger than the area ofthe opening 110 a in the buffer layer 110, and thus, the inner surfaceof the opening OP in the inorganic insulating layer 125 may have astepped form. Although not shown in FIG. 13, the inner surface of theopening OP in the inorganic insulating layer 125 may have a stepped formdue to a difference between the area of the opening 121 a in the firstgate insulating layer 121 and the area of the opening 122 a in thesecond gate insulating layer 122, and a difference between the area ofthe opening 122 a in the second gate insulating layer 122 and the areaof the opening 130 a in the interlayer insulating layer 130.

FIG. 14 is a cross-sectional view of a portion of a display apparatusaccording to another alternative embodiment. More particularly, FIG. 14is a cross-sectional view schematically illustrating the vicinity of thebending area BA.

Referring to FIG. 14, in an embodiment, the inorganic insulating layer125 may have a groove corresponding to a bending area BA. The groove maydenote an area where the inorganic insulating layer 125 is partiallyremoved in a downward direction (−z direction) and a portion thereofremains. In one embodiment, for example, the buffer layer 110 may extendcontinuously over the first area 1A, the bending area BA and the secondarea 2A. In an embodiment, the opening 121 a is defined in the firstgate insulating layer 121 to correspond to the bending area BA, theopening 122 a is defined in the second gate insulating layer 122 tocorrespond to the bending area BA, and the opening 130 a is defined inthe interlayer insulating layer 130 to correspond to the bending areaBA. Accordingly, in such an embodiment, the inorganic insulating layer125 including the buffer layer 110, the first gate insulating layer 121,the second gate insulating layer 122 and the interlayer insulating layer130 has a groove GR corresponding to the bending area BA. In anembodiment, the inorganic insulating layer 125 may also include thegroove GR in any one of various forms. In one embodiment, for example, aportion of the upper surface of the buffer layer 110 may also beremoved, or the bottom surface of a gate insulating layer, e.g., thefirst gate insulating layer 121 or the second gate insulating layer 122,may remain without being removed.

In an embodiment, where the groove GR corresponds to the bending areaBA, the groove GR may overlap the bending area BA. In such anembodiment, the area of the groove GR may be larger than the area of thebending area BA. In such an embodiment, as shown in FIG. 13, the widthOW of the groove GR is greater than the width of the bending area BA.Here, the area of the groove GR may be defined as the area of an openingwith the smallest area among the opening 121 a of the first gateinsulating layer 121, the opening 122 a of the second gate insulatinglayer 122, and the opening 130 a of the interlayer insulating layer 130.

In an embodiment, since the hardness of the inorganic insulating layer125 is greater than that of an organic material layer 160, theprobability of crack formation in the inorganic insulating layer 125 inthe bending area BA is very high. When a crack forms in the inorganicinsulating layer 125, the probability of crack propagation to aconnection line 215 increases. Accordingly, in an embodiment, by forminga groove in the inorganic insulating layer 125, the probability of crackformation in the inorganic insulating layer 125 may be lowered. Theorganic material layer 160 having a stress buffering function isarranged in the groove GR, and thus, formation of a crack in theconnection line 215 may be effectively prevented by forming the grooveGR without forming an opening in the inorganic insulating layer 125 inthe bending area BA.

In an embodiment, the organic material layer 160 may be provided tocorrespond to the bending area BA, without forming an opening or agroove in the inorganic insulating layer 125. In such an embodiment,concentration of tensile stress on the connection line 215 may beeffectively prevented by the organic material layer 160.

FIGS. 15A and 15B are cross-sectional views of portions of displayapparatuses according to other alternative embodiments. Moreparticularly, FIGS. 15A and 15B are cross-sectional views schematicallyillustrating the vicinity of a bending area BA.

In embodiments described above with reference to FIGS. 2 to 14, an endof the connection line 215 is arranged in the organic through-hole 160h, but the invention is not limited thereto. In one alternativeembodiment, for example, as shown in FIG. 15A, an end of the connectionline 215 may extend inside the organic through-hole 160 h and may bearranged on the upper surface of the organic material layer 160. In suchan embodiment, the width W1 of the connection line 215 in the seconddirection (X direction) may be smaller than a width ORW of the organicmaterial layer 160.

In another alternative, as shown in FIG. 15B, the width W1 of theconnection line 215 in the second direction (X direction) may be greaterthan the width ORW of the organic material layer 160. In such anembodiment, the connection line 215 may extend inside the organicthrough-hole 160 h and across the upper surface of the inorganicinsulating layer 125 and the upper surface of the organic material layer160.

In embodiments of the invention, various modifications may be made in away such that one end of the connection line 215 is arranged in theorganic through-hole 160 h and the other end of the connection line 215is arranged in the organic through-hole 160 h and on the upper surfaceof the organic material layer 160.

FIG. 16 is a cross-sectional view of portions of a display apparatusaccording to another alternative embodiment. In FIG. 16, the samereference numerals as those in FIG. 3 denote the same or like elements,and any repetitive detailed descriptions thereof will be omitted.

Referring to FIG. 16, in an embodiment, a bending protective layer 600may be formed on the upper surface of the substrate 100 to overlap thebending area BA. The bending protective layer 600 may be positioned onthe connection line 215 to correspond to the bending area BA. When astacked structure is bent, a stress neutral plane is present in thestacked structure. If the bending protective layer 600 is not present,excessive tensile stress may be applied to the connection line 215 inthe bending area BA, according to bending of the substrate 100 or thelike as described later because the position of the connection line 215may not correspond to the stress neutral plane. In an embodiment, byallowing the bending protective layer 600 to be present and bycontrolling a thickness and a modulus of the bending protective layer600, the position of a stress-neutral plane may be adjusted in a stackedstructure including the substrate 100, the connection line 215 and thebending protective layer 600. Therefore, by positioning the stressneutral plane in the vicinity of the connection line 215 through thebending protective layer 600, tensile stress applied to the connectionline 215 may be reduced so as to protect the bending area BA. Thebending protective layer 600 may be formed by coating a liquid or pastematerial and curing the material.

Hereinabove, various embodiments have been described. Such embodimentsmay be implemented as separate embodiments, or combined with each other.For example, various combinations may be possible such that anembodiment related to a positional relationship between the internalconductive line 213 i and the external conductive line 213 o, describedwith reference to FIGS. 4 and 5, may be applied to an embodiment inwhich a groove is formed in the inorganic insulating layer 125,described with reference to FIG. 14.

It should be understood that embodiments described herein should beconsidered in a descriptive sense only and not for purposes oflimitation. Descriptions of features or aspects within each embodimentshould typically be considered as available for other similar featuresor aspects in other embodiments.

While one or more embodiments have been described with reference to thefigures, it will be understood by those of ordinary skill in the artthat various changes in form and details may be made therein withoutdeparting from the spirit and scope as defined by the following claims.

What is claimed is:
 1. A display apparatus comprising: a substrate onwhich a first area, a second area, and a bending area between the firstarea and the second area are defined, wherein the substrate is bentaround a bending axis extending in a first direction; a display areaarranged in the first area; an encapsulation layer covering the displayarea and comprising an organic encapsulation layer; a plurality ofinternal conductive lines arranged in the first area and a plurality ofexternal conductive lines arranged in the second area; an organicmaterial layer covering the bending area and covering at least a portionof the plurality of internal conductive lines and the plurality ofexternal conductive lines; and a plurality of connection lines on theorganic material layer and connecting the plurality of internalconductive lines to the plurality of external conductive lines,respectively, wherein a plurality of organic through-holes is definedthrough the organic material layer, wherein the plurality of connectionlines are respectively connected to the plurality of internal conductivelines between the first area and the bending area through the pluralityof organic through-holes, and wherein the organic encapsulation layerand the organic material layer are spaced apart from each other.
 2. Thedisplay apparatus of claim 1, wherein the plurality of organicthrough-holes comprises a plurality of first organic through-holesarranged in the first direction, and an upper surface of the organicmaterial layer located between the plurality of first organicthrough-holes has a convex curved shape.
 3. The display apparatus ofclaim 2, wherein a portion of each of the plurality of connection linesare on the upper surface of the organic material layer having the convexcurved shape, and the plurality of connection lines extend across thebending area.
 4. The display apparatus of claim 1, wherein theencapsulation layer further comprises a first inorganic encapsulationlayer and a second inorganic encapsulation layer, the organicencapsulation layer is disposed between the first inorganicencapsulation layer and the second inorganic encapsulation layer, andthe encapsulation layer and the organic material layer are spaced apartfrom each other.
 5. The display apparatus of claim 1, wherein an end ofeach of the plurality of internal conductive lines overlaps an inside ofa respective one of the plurality of organic through-holes, and an endof each of the plurality of internal conductive lines does not overlap alower edge of each of the plurality of organic through-holes.